Why we invested in SweGaN

Semiconductor manufacturer that develops and produces Gallium Nitride on Silicon Carbide (GaN-on-SiC) epitaxial wafers.

SweGaN’s unique QuanFINE® structure is based on a buffer-free concept that seamlessly combines the strengths of GaN and SiC.

The development of new radio frequency technology for communication, defense, and power components for energy systems hinges on ever-improving semiconductor performance. There is now a demand for transistors made from materials that can withstand higher operating parameters—such as frequency, voltage, and temperature—beyond the limits of silicon. Industry focus is shifting to a third generation of semiconductor materials, particularly silicon carbide (SiC) and gallium nitride (GaN), alongside various combinations and modifications. While these materials have been under development for decades, large-scale adoption has been hindered by quality and scalability issues, impacting cost and applicability.

Founded in 2014 by a research team from Linköping University, SweGaN is industrialising a novel GaN/SiC material structure and manufacturing process that offers superior properties and more efficient production compared to competitors. SweGaN’s advancements are key to enabling the large-scale use of these materials, and experts have recognized the company as "the best in Europe" for new GaN technology.

By investing in SweGaN, Navigare supports the establishment of a leading European supplier of next-generation semiconductors, vital for maintaining industrial competitiveness across multiple sectors.

Investment date

September 2024